Stress-induced self-separation is one of the most efficient process for preparing native GaN substrate. The control of GaN film thickness is the key point for GaN film separating from substrate completely. Considering the bowing of bilayer. we studied the radial stress in GaN film before separation. https://safeersappliancers.shop/product-category/smeg-dfd13tp3x-full-size-dishwasher-stainless-steel/